US Patent Application 18446864. SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER simplified abstract

SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shih-Chuan Chiu of Hsinchu City (TW)]]

[[Category:Huan-Chieh Su of Tianzhong Township (TW)]]

[[Category:Pei-Yu Wang of Hsinchu City (TW)]]

[[Category:Cheng-Chi Chuang of New Taipei City (TW)]]

[[Category:Chun-Yuan Chen of Hsinchu City (TW)]]

[[Category:Li-Zhen Yu of New Taipei City (TW)]]

[[Category:Chia-Hao Chang of Hsinchu City (TW)]]

[[Category:Yu-Ming Lin of Hsinchu City (TW)]]

[[Category:Chih-Hao Wang of Baoshan Township (TW)]]

SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446864 titled 'SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER

Simplified Explanation

The patent application describes a semiconductor structure with a front side and a backside.

• The structure includes an amorphous layer made of silicon on the backside of the semiconductor structure.
• A first silicide layer is formed over the amorphous layer.
• A first metal contact is formed over the first silicide layer.

Original Abstract Submitted

A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.