US Patent Application 18446842. CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD simplified abstract

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CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chun-Hsi Huang of Hsinchu City (TW)

Chia-Lin Hsueh of Zhubei City (TW)

Huang-Chu Ko of Miaoli County (TW)

CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446842 titled 'CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD

Simplified Explanation

- The patent application describes an apparatus and method for detecting and adjusting the polishing process based on the profile of a polishing pad. - The apparatus includes a polishing pad, a substrate carrier, and a detection module. - The detection module includes a probe and a beam, with the probe being able to measure the thickness of different areas on the polishing pad. - The probe can move along the beam to gather measurements from various locations on the polishing pad. - The detected profile of the polishing pad can be used to make adjustments to the polishing process, ensuring optimal polishing results. - This innovation aims to improve the efficiency and effectiveness of polishing processes by accurately detecting and adjusting for variations in the polishing pad profile.


Original Abstract Submitted

The present disclosure describes an apparatus and a method to detect a polishing pad profile during a polish process and adjust the polishing process based on the detected profile. The apparatus can include a polishing pad configured to polishing a substrate, a substrate carrier configured to hold the substrate against the polishing pad, and a detection module configured to detect a profile of the polishing pad. The detection module can include a probe configured to measure a thickness of one or more areas on the polishing pad, and a beam configured to support the probe, where the probe can be further configured to move along the beam.

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