US Patent Application 18446738. SYSTEM AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract

SYSTEM AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Ao Chang of Jinhu Township (TW)

Pei-Ren Jeng of Chu-Bei City (TW)

Chii-Horng Li of Zhubei City (TW)

Yee-Chia Yeo of Hsinchu (TW)

SYSTEM AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446738 titled 'SYSTEM AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a method of manufacturing semiconductor devices.

• A recess is formed between fins in a substrate.
• A dielectric layer is formed over the fins and in the recess.
• A bottom seed structure is formed over the dielectric layer within the recess.
• The dielectric layer is exposed along the sidewalls of the recess.
• A dummy gate material is grown from the bottom seed structure in a bottom-up deposition process.
• The dummy gate material is not grown from the dielectric layer exposed along the sidewalls of the recess.

Original Abstract Submitted

A system and methods of manufacturing semiconductor devices is described herein. The method includes forming a recess between fins in a substrate and forming a dielectric layer over the fins and in the recess. Once the dielectric layer has been formed, a bottom seed structure is formed over the dielectric layer within the recess and the dielectric layer is exposed along sidewalls of the recess. A dummy gate material is grown from the bottom seed structure in a bottom-up deposition process without growing the dummy gate material from the dielectric layer exposed along sidewalls of the recess.