US Patent Application 18446703. MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract

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MEMORY DEVICE AND FABRICATION METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jun-Yao Chen of Hsinchu (TW)

Sheng-Huang Huang of Hsinchu (TW)

Hung-Cho Wang of Hsinchu (TW)

Harry-Hak-Lay Chuang of Hsinchu (TW)

MEMORY DEVICE AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446703 titled 'MEMORY DEVICE AND FABRICATION METHOD THEREOF

Simplified Explanation

The patent application describes a memory device with specific components and their arrangement.

  • The memory device consists of a bottom electrode, a magnetic tunnel junction (MTJ) stack, a top electrode, and a sidewall spacer.
  • The MTJ stack is positioned above the bottom electrode.
  • The top electrode is placed on top of the MTJ stack.
  • The MTJ stack and the top electrode are surrounded laterally by a sidewall spacer.
  • The outermost sidewall of the sidewall spacer is set back from the outermost sidewall of the bottom electrode.


Original Abstract Submitted

A memory device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack, a top electrode, and a sidewall spacer. The MTJ stack is over the bottom electrode. The top electrode is over the MTJ stack. The sidewall spacer laterally surrounds the MTJ stack and the top electrode. The sidewall spacer has an outermost sidewall laterally set back from an outermost sidewall of the bottom electrode.

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