US Patent Application 18446632. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Hsuan Lin of Hsinchu City (TW)
Hsi Chung Chen of Tainan City (TW)
Chih-Teng Liao of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446632 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
Simplified Explanation
- The patent application describes a semiconductor structure and a method for manufacturing it. - The structure includes various components such as a substrate, conductive region, insulation layers, gate structure, low-k spacer, gate contact, and conductive region contact. - The low-k spacer is positioned between the sidewall of the gate structure and the first insulation layer. - The gate contact is placed on the top surface of the gate structure. - The proximity distance between the sidewall of the gate contact and the conductive region contact on the top surface of the second insulation layer is between approximately 4 nm and 7 nm. - The method for manufacturing the semiconductor structure is also explained in the patent application.
Original Abstract Submitted
A semiconductor structure includes a substrate, a conductive region, a first insulation layer, a second insulation layer, a gate structure, a low-k spacer, a gate contact, and a conductive region contact. The low-k spacer is formed between a sidewall of the gate structure and the first insulation layer. The gate contact is landed on a top surface of the gate structure. A proximity distance between a sidewall of the gate contact and the conductive region contact along a top surface of the second insulation layer is in a range of from about 4 nm to about 7 nm. A method for manufacturing a semiconductor structure is also provided.
