US Patent Application 18446591. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yin-Jie Pan of New Taipei City (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446591 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
- The patent application describes a semiconductor device and a method of manufacturing it. - The device is made using a channel-less, porous low K material. - The material is created by combining a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. - The material is then cured to remove a porogen and collapse channels within it. - This allows the material to be formed with a scaling factor of less than or equal to about 1.8.
Original Abstract Submitted
A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
