US Patent Application 18446541. SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME simplified abstract
SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company Limited
Inventor(s)
Mauricio Manfrini of Zhubei City (TW)
Sai-Hooi Yeong of Zhubei City (TW)
Yu-Ming Lin of Hsinchu City (TW)
SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446541 titled 'SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME
Simplified Explanation
The patent application describes a field effect transistor and a method of making it.
- The field effect transistor consists of active regions, a channel region, and contact via structures.
- The active regions are located over a channel layer, and the channel region is formed within the channel layer between the active regions.
- The contact via structures are electrically connected to the active regions.
- The contact via structures are formed in an interlayer dielectric layer that extends over the channel layer.
Original Abstract Submitted
Field effect transistors and method of making. The field effect transistor includes a pair of active regions over a channel layer, a channel region formed in the channel layer and located between the pair of active regions, and a pair of contact via structures electrically connected to the pair of active regions. The contact via structure is formed in an interlayer dielectric layer that extends over the channel layer.
