US Patent Application 18446514. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract

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SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Shuai Guo of Hefei (CN)

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446514 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application is related to the semiconductor field and describes a semiconductor structure and a method for manufacturing it.

  • The semiconductor structure includes a substrate with a bit line extending in one direction.
  • An active pillar is located on the bit line, with its bottom surface in contact with the bit line. The active pillar is doped with an N-type element.
  • An inversion region is present on the side surface of the active pillar and is doped with a P-type element.
  • A dielectric layer and a word line extend in a different direction. The dielectric layer and the word line partially wrap around the inversion region.
  • The dielectric layer is positioned between the word line and the inversion region.


Original Abstract Submitted

Embodiments of the disclosure relate to the semiconductor field, and provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate that has a bit line extending in a first direction; an active pillar located on the bit line, in which a bottom surface of the active pillar is in contact with the bit line, and the active pillar is doped with an N-type element; an inversion region located on the side surface of the active pillar, and doped with a P-type element; a dielectric layer and a word line extending in a second direction, in which the dielectric layer and the word line wrap part of the inversion region, and the dielectric layer is located between the word line and the inversion region.

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