US Patent Application 18446415. METHODS FOR FORMING POLYCRYSTALLINE CHANNEL ON DIELECTRIC FILMS WITH CONTROLLED GRAIN BOUNDARIES simplified abstract

METHODS FOR FORMING POLYCRYSTALLINE CHANNEL ON DIELECTRIC FILMS WITH CONTROLLED GRAIN BOUNDARIES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Cheng-Hsien Wu of Hsinchu (TW)

METHODS FOR FORMING POLYCRYSTALLINE CHANNEL ON DIELECTRIC FILMS WITH CONTROLLED GRAIN BOUNDARIES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446415 titled 'METHODS FOR FORMING POLYCRYSTALLINE CHANNEL ON DIELECTRIC FILMS WITH CONTROLLED GRAIN BOUNDARIES

Simplified Explanation

The abstract describes a method for forming a polycrystalline semiconductor layer in a patent application. Here is a simplified explanation of the abstract:

• The method involves several steps to form a polycrystalline semiconductor layer.
• First, a dielectric layer is formed, and a plurality of spacers are placed over it.
• The dielectric layer is then etched using the spacers as a mask, creating a recess in the dielectric layer.
• An amorphous semiconductor layer is deposited over the spacers and the dielectric layer, filling the recess.
• Finally, the amorphous semiconductor layer is recrystallized, resulting in the formation of a polycrystalline semiconductor layer.

Bullet points explaining the patent/innovation:

• The method provides a way to form a polycrystalline semiconductor layer, which can have improved electrical properties compared to amorphous or single-crystal semiconductor layers.
• By using spacers as an etch mask, the method allows for precise and controlled etching of the dielectric layer, ensuring accurate formation of the recess.
• The deposition of the amorphous semiconductor layer over the spacers and dielectric layer helps to fill the recess, ensuring a uniform and continuous polycrystalline semiconductor layer.
• The recrystallization process transforms the amorphous semiconductor layer into a polycrystalline structure, which can enhance the conductivity and performance of the semiconductor material.
• This method can be used in various semiconductor applications, such as integrated circuits, solar cells, and display technologies, to improve device performance and efficiency.

Original Abstract Submitted

A method for forming a polycrystalline semiconductor layer includes forming a plurality of spacers over a dielectric layer, etching the dielectric layer using the plurality of spacers as an etch mask to form a recess in the dielectric layer, depositing an amorphous semiconductor layer over the plurality of spacers and the dielectric layer to fill the recess, and recrystallizing the amorphous semiconductor layer to form a polycrystalline semiconductor layer.