US Patent Application 18446151. MULTIGATE DEVICE WITH AIR GAP SPACER AND BACKSIDE RAIL CONTACT AND METHOD OF FABRICATING THEREOF simplified abstract
Contents
MULTIGATE DEVICE WITH AIR GAP SPACER AND BACKSIDE RAIL CONTACT AND METHOD OF FABRICATING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Guan-Lin Chen of Hsinchu County (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
Shi Ning Ju of Hsinchu City (TW)
Chih-Hao Wang of Hsinchu County (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
MULTIGATE DEVICE WITH AIR GAP SPACER AND BACKSIDE RAIL CONTACT AND METHOD OF FABRICATING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446151 titled 'MULTIGATE DEVICE WITH AIR GAP SPACER AND BACKSIDE RAIL CONTACT AND METHOD OF FABRICATING THEREOF
Simplified Explanation
The patent application describes methods and devices involving a multigate device with specific components and features.
- The device includes a channel layer located between a source feature and a drain feature.
- A metal gate surrounds the channel layer.
- A first air gap spacer is positioned between the metal gate and the source feature.
- A second air gap spacer is positioned between the metal gate and the drain feature.
- A backside contact extends to the source feature.
- A power line metallization layer is connected to the backside contact.
Original Abstract Submitted
Methods and devices that include a multigate device having a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, and a first air gap spacer interposing the metal gate and the source feature and a second air gap spacer interposing the metal gate and the drain feature. A backside contact extends to the source feature. A power line metallization layer is connected to the backside contact.
