US Patent Application 18366397. EUV PHOTOMASK AND RELATED METHODS simplified abstract
Contents
EUV PHOTOMASK AND RELATED METHODS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chi-Hung Liao of Taipei County (TW)
EUV PHOTOMASK AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366397 titled 'EUV PHOTOMASK AND RELATED METHODS
Simplified Explanation
The patent application describes a method of fabricating a semiconductor device using a resist layer and an exposure process.
- The method involves providing a first substrate and applying a resist layer on top of it.
- An exposure process is then performed on the resist layer using a radiation source and an intervening mask.
- The intervening mask consists of a second substrate, a multi-layer structure, a capping layer, and an absorber layer.
- The absorber layer has a main pattern area and an opening area that is located at a distance from the main pattern area.
- After the exposure process, the resist layer is developed to create a patterned resist layer.
Original Abstract Submitted
A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.
