US Patent Application 18365654. SEMICONDUCTOR DEVICE AND METHOD simplified abstract

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SEMICONDUCTOR DEVICE AND METHOD

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Tsai-Yu Huang of Taoyuan City (TW)

Han-De Chen of Hsinchu (TW)

Huicheng Chang of Tainan City (TW)

Yee-Chia Yeo of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18365654 titled 'SEMICONDUCTOR DEVICE AND METHOD

Simplified Explanation

The patent application describes a device that includes two semiconductor strips and a dielectric strip between them. The dielectric strip has a decreasing width and includes a void. There is also a gate structure that extends along the semiconductor strips and the dielectric strip.

  • The device includes two semiconductor strips with a dielectric strip between them.
  • The width of the dielectric strip decreases in a specific direction.
  • The dielectric strip has a void.
  • There is a gate structure that extends along the semiconductor strips and the dielectric strip.


Original Abstract Submitted

In an embodiment, a device includes: a first semiconductor strip over a substrate, the first semiconductor strip including a first channel region; a second semiconductor strip over the substrate, the second semiconductor strip including a second channel region; a dielectric strip disposed between the first semiconductor strip and the second semiconductor strip, a width of the dielectric strip decreasing along a first direction extending away from the substrate, the dielectric strip including a void; and a gate structure extending along the first channel region, along the second channel region, and along a top surface and sidewalls of the dielectric strip.