US Patent Application 18365654. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Tsai-Yu Huang of Taoyuan City (TW)
Huicheng Chang of Tainan City (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365654 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a device that includes two semiconductor strips and a dielectric strip between them. The dielectric strip has a decreasing width and includes a void. There is also a gate structure that extends along the semiconductor strips and the dielectric strip.
- The device includes two semiconductor strips with a dielectric strip between them.
- The width of the dielectric strip decreases in a specific direction.
- The dielectric strip has a void.
- There is a gate structure that extends along the semiconductor strips and the dielectric strip.
Original Abstract Submitted
In an embodiment, a device includes: a first semiconductor strip over a substrate, the first semiconductor strip including a first channel region; a second semiconductor strip over the substrate, the second semiconductor strip including a second channel region; a dielectric strip disposed between the first semiconductor strip and the second semiconductor strip, a width of the dielectric strip decreasing along a first direction extending away from the substrate, the dielectric strip including a void; and a gate structure extending along the first channel region, along the second channel region, and along a top surface and sidewalls of the dielectric strip.
