US Patent Application 18365517. DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL simplified abstract

DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Szu-Ying Chen of Hsinchu (TW)

Ya-Wen Chiu of Tainan City (TW)

Cheng-Po Chau of Tainan City (TW)

Yi Che Chan of Hsinchu (TW)

Chih Ping Liao of Hsinchu (TW)

YungHao Wang of Hsinchu (TW)

Sen-Hong Syue of Zhubei City (TW)

DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18365517 titled 'DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL

Simplified Explanation

- The patent application describes methods and devices for performing a high pressure anneal process during the formation of a semiconductor device. - The high pressure anneal process can be either a dry process with process gases or a wet process with steam. - The purpose of the high pressure anneal process is to enhance the formation of the semiconductor device. - The invention provides embodiments of devices that can create and maintain the required pressurized environment for the anneal process. - The patent application emphasizes the importance of the high pressure anneal process in improving the performance and reliability of semiconductor devices.

Original Abstract Submitted

Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.