US Patent Application 18365490. SELF-ALIGNED SCHEME FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
SELF-ALIGNED SCHEME FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Hsiu-Wen Hsueh of Taichung City (TW)
Wei-Ren Wang of New Taipei City (TW)
Po-Hsiang Huang of Taipei City (TW)
Chii-Ping Chen of Hsinchu (TW)
Jen Hung Wang of Zhubei City (TW)
SELF-ALIGNED SCHEME FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365490 titled 'SELF-ALIGNED SCHEME FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a method for fabricating a semiconductor device. Here are the key points:
- The method involves creating a first conductive feature in a layer called the first inter-metal dielectric (IMD) layer.
- A blocking film is then deposited over the first conductive feature to physically contact it.
- Next, a first dielectric layer is deposited over the first IMD layer, followed by a second dielectric layer on top of the first dielectric layer.
- The blocking film is removed at this stage.
- An etch stop layer is deposited, which physically contacts both the first conductive feature and the second dielectric layer.
- A second IMD layer is formed over the etch stop layer.
- An opening is etched in the second IMD layer and the etch stop layer to expose the first conductive feature.
- Finally, a second conductive feature is formed within the opening.
Overall, this method allows for the creation of multiple conductive features within a semiconductor device, with the use of various dielectric layers and an etch stop layer to ensure precise and accurate fabrication.
Original Abstract Submitted
In an embodiment, a method includes forming a first conductive feature in a first inter-metal dielectric (IMD) layer; depositing a blocking film over and physically contacting the first conductive feature; depositing a first dielectric layer over and physically contacting the first IMD layer; depositing a second dielectric layer over and physically contacting the first dielectric layer; removing the blocking film; depositing an etch stop layer over any physically contacting the first conductive feature and the second dielectric layer; forming a second IMD layer over the etch stop layer; etching an opening in the second IMD layer and the etch stop layer to expose the first conductive feature; and forming a second conductive feature in the opening.
