US Patent Application 18365068. Memory Array and Methods of Forming Same simplified abstract
Contents
Memory Array and Methods of Forming Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Memory Array and Methods of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365068 titled 'Memory Array and Methods of Forming Same
Simplified Explanation
The patent application describes a device that includes a semiconductor substrate and multiple word lines and gate electrodes for transistors.
- The device has a first word line that provides a gate electrode for a first transistor and a second word line that provides a gate electrode for a second transistor.
- The second word line is insulated from the first word line by a dielectric material.
- The device also includes a source line and a bit line that intersect with the word lines.
- A memory film is located between the first word line and the source line.
- A first semiconductor material is present between the memory film and the source line.
Original Abstract Submitted
A device includes a semiconductor substrate; a first word line over the semiconductor substrate, the first word line providing a first gate electrode for a first transistor; and a second word line over the first word line. The second word line is insulated from the first word line by a first dielectric material, and the second word line providing a second gate electrode for a second transistor over the first transistor. The device further including a source line intersecting the first word line and the second word line; a bit line intersecting the first word line and the second word line; a memory film between the first word line and the source line; and a first semiconductor material between the memory film and the source line.
