DEEP TRENCH ISOLATION STRUCTURE IN A PIXEL SENSOR

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DEEP TRENCH ISOLATION STRUCTURE IN A PIXEL SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18364734 titled 'DEEP TRENCH ISOLATION STRUCTURE IN A PIXEL SENSOR

Simplified Explanation

- The patent application describes a pixel sensor with a deep trench isolation (DTI) structure that extends the full height of the substrate. - The DTI structure helps to absorb or reflect incident light that enters the pixel sensor at a non-orthogonal angle. - By preventing the incident light from traveling through the pixel sensor and into adjacent pixel sensors, the DTI structure can increase the spatial resolution of an image sensor. - It can also increase the overall sensitivity of the image sensor and reduce color mixing between pixel sensors. - Additionally, the DTI structure can decrease image noise after color correction.

Original Abstract Submitted

A pixel sensor may include a deep trench isolation (DTI) structure that extends the full height of a substrate in which a photodiode of the pixel sensor is included. Incident light entering the pixel sensor at a non-orthogonal angle is absorbed or reflected by the DTI structure along the full height of the substrate. In this way, the DTI structure may reduce, minimize, and/or prevent the incident light from traveling through the pixel sensor and into an adjacent pixel sensor along the full height of the substrate. This may increase the spatial resolution of an image sensor in which the DTI structure is included, may increase the overall sensitivity of the image sensor, may reduce and/or prevent color mixing between pixel sensors of the image sensor, and/or may decrease image noise after color correction.

US Patent Application 18364734. DEEP TRENCH ISOLATION STRUCTURE IN A PIXEL SENSOR simplified abstract

Contents

DEEP TRENCH ISOLATION STRUCTURE IN A PIXEL SENSOR

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