US Patent Application 18364682. BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR simplified abstract
Contents
BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Cheng-Ta Wu of Shueishang Township (TW)]]
[[Category:Kuo-Hwa Tzeng of Taipei City (TW)]]
[[Category:Yeur-Luen Tu of Taichung (TW)]]
BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18364682 titled 'BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR
Simplified Explanation
- The patent application is about an image sensor with a specific structure called back-side deep trench isolation (BDTI). - The image sensor has multiple pixel regions, each containing a photodiode that converts radiation into an electrical signal. - The photodiode has a specific doping configuration, with a column of one doping type surrounded by a layer of a different doping type. - The BDTI structure is placed between adjacent pixel regions and extends from the back-side of the image sensor to a position within the photodiode layer. - The BDTI structure consists of a doped liner with the second doping type and a dielectric fill layer. - The doped liner lines the sidewall surface of the dielectric fill layer, providing isolation between adjacent pixel regions.
Original Abstract Submitted
The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.
