US Patent Application 18364667. EMBEDDED LIGHT SHIELD STRUCTURE FOR CMOS IMAGE SENSOR simplified abstract

EMBEDDED LIGHT SHIELD STRUCTURE FOR CMOS IMAGE SENSOR

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shih-Hsun Hsu of New Taipei City (TW)]]

[[Category:Ping-Hao Lin of Tainan City (TW)]]

EMBEDDED LIGHT SHIELD STRUCTURE FOR CMOS IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18364667 titled 'EMBEDDED LIGHT SHIELD STRUCTURE FOR CMOS IMAGE SENSOR

Simplified Explanation

The patent application describes an image sensor with a unique structure to improve its performance and functionality.

• The image sensor includes a photodetector on the front-side surface of a semiconductor substrate.
• A trench isolation structure is placed on the back-side surface of the substrate, consisting of a buffer layer and a dielectric liner.
• The buffer layer covers the back-side surface and fills trenches in the substrate, while the dielectric liner is between the buffer layer and the substrate.
• A composite grid structure is aligned over the trenches, with composite grid segments.
• The buffer layer separates the dielectric liner from the composite grid structure.
• A light shield structure is placed within the buffer layer, directly over the photodetector.

Overall, this patent application introduces a novel image sensor design that incorporates a trench isolation structure, composite grid structure, and light shield structure to enhance its performance and functionality.

Original Abstract Submitted

In some embodiments, an image sensor is provided. The image sensor comprises a first photodetector disposed within a front-side surface of a semiconductor substrate. A trench isolation structure is disposed over a back-side surface of the semiconductor substrate. The trench isolation structure includes a buffer layer and a dielectric liner. The buffer layer covers the back-side surface of the semiconductor substrate and fills trenches that extend downward into the back-side surface of the semiconductor substrate. The dielectric liner is disposed between the buffer layer and the semiconductor substrate. A composite grid structure has composite grid segments that are aligned over the trenches, respectively. The buffer layer separates the dielectric liner from the composite grid structure. A light shield structure is disposed within the buffer layer and directly overlies the first photodetector.