US Patent Application 18364662. IMAGE SENSOR WITH A HIGH ABSORPTION LAYER simplified abstract

IMAGE SENSOR WITH A HIGH ABSORPTION LAYER

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chien-Chang Huang of Tainan (TW)]]

[[Category:Chien Nan Tu of Kaohsiung City (TW)]]

[[Category:Ming-Chi Wu of Kaohsiung City (TW)]]

[[Category:Yu-Lung Yeh of Kaohsiung City (TW)]]

[[Category:Ji Heng Jiang of Tainan (TW)]]

IMAGE SENSOR WITH A HIGH ABSORPTION LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18364662 titled 'IMAGE SENSOR WITH A HIGH ABSORPTION LAYER

Simplified Explanation

- The patent application describes an image sensor with high quantum efficiency. - The image sensor includes a semiconductor substrate with a non-porous semiconductor layer on the front side. - A periodic structure is present on the back side of the semiconductor substrate. - A high absorption layer made of a semiconductor material with a lower energy bandgap than the non-porous semiconductor layer is lined on the periodic structure. - A photodetector is integrated into the semiconductor substrate and the high absorption layer. - The patent application also provides a method for manufacturing the image sensor.

Original Abstract Submitted

An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.