US Patent Application 18363217. FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME simplified abstract

FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company Limited

Inventor(s)

Chun-Chieh Lu of Taipei City (TW)

Mauricio Manfrini of Zhubei City (TW)

Marcus Johannes Hendricus Van Dal of Linden (BE)

Chih-Yu Chang of Taipei City (TW)

Sai-Hooi Yeong of Zhubei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Georgios Vallianitis of Heverlee (BE)

FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18363217 titled 'FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME

Simplified Explanation

The patent application describes a method for fabricating a specific type of capacitor called an MFM capacitor.

• MFM capacitor has multiple metal contacts and is used in various electronic devices.
• The method involves placing a first metal strip on a substrate in one direction.
• A layer of ferroelectric material is then placed on top of the first metal strip.
• A second metal strip is placed on top of the ferroelectric layer in a different direction.
• Metal contacts are placed between the first and second metal strips in the area where they intersect.
• These metal contacts help in the functioning of the capacitor.
• The invention provides a structure and method for fabricating the MFM capacitor efficiently.

Original Abstract Submitted

Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.