US Patent Application 18362983. METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE simplified abstract

METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Feng-Wei Kuo of Hsinchu County (TW)

Wen-Shiang Liao of Miaoli County (TW)

METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362983 titled 'METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE

Simplified Explanation

- The patent application describes a semiconductor structure that includes a semiconductor substrate, a patterned dielectric layer, a grating coupler, and a waveguide. - The semiconductor substrate has an optical reflective layer. - The patterned dielectric layer is placed on the semiconductor substrate and covers part of the optical reflective layer. - The grating coupler and the waveguide are positioned on top of the patterned dielectric layer. - Both the grating coupler and the waveguide are located directly above the optical reflective layer. - The purpose of this structure is not explicitly mentioned in the abstract.

Original Abstract Submitted

A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.