US Patent Application 18362968. SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE simplified abstract

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SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Zi-Jheng Liu of Taoyuan City (TW)

Chen-Cheng Kuo of Shin-Chu county (TW)

Hung-Jui Kuo of Hsinchu City (TW)

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362968 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE

Simplified Explanation

The patent application describes a method of fabricating a semiconductor package.

  • The method involves providing a substrate with at least one contact and forming a redistribution layer on the substrate.
  • The redistribution layer is formed by applying a dielectric material layer over the substrate and using a double exposure process.
  • A development process is then performed, creating a dual damascene opening in the dielectric material layer.
  • A seed metallic layer is applied over the dual damascene opening and the dielectric material layer.
  • A metal layer is then formed over the seed metallic layer.
  • A redistribution pattern is created in the dual damascene opening, which is electrically connected to the at least one contact on the substrate.


Original Abstract Submitted

A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.

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