US Patent Application 18362868. INTEGRATED CIRCUIT WITH ACTIVE REGION JOGS simplified abstract

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INTEGRATED CIRCUIT WITH ACTIVE REGION JOGS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Tian-Yu Xie of Shanghai City (CN)

Xin-Yong Wang of Shanghai City (CN)

Lei Pan of Shanghai City (CN)

Kuo-Ji Chen of New Taipei City (TW)

INTEGRATED CIRCUIT WITH ACTIVE REGION JOGS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362868 titled 'INTEGRATED CIRCUIT WITH ACTIVE REGION JOGS

Simplified Explanation

The abstract describes an integrated circuit (IC) structure with specific components and their arrangements.

  • The IC structure includes two gates, two source regions, a shared drain region, and an isolation region.
  • The first gate has two portions extending in different directions, and the same is true for the second gate.
  • The shared drain region connects the first portions of both gates.
  • The first source region is separated from the shared drain region by the first gate, and the same is true for the second source region and the second gate.
  • The isolation region is located between the first portions of both gates and has a quadrilateral pattern that borders the shared drain region.


Original Abstract Submitted

An IC structure includes first and second gates, first and second source regions, a shared drain region, and an isolation region. The first gate has a first portion extending along a first direction and a second portion extending along a second direction. The second gate has a first portion extending along the first direction and a second portion extending along the second direction. The shared drain region extends from the first portion of the first gate to the first portion of the second gate. The first source region is spaced apart from the shared drain region by the first gate. The second source region is spaced apart from the shared drain region by the second gate. The isolation region is between the first portion of the first gate and the first portion of the second gate, and resembles a quadrilateral pattern bordering the shared drain region.

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