US Patent Application 18362824. CELL REGIONS AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
Contents
CELL REGIONS AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ting-Wei Chiang of Hsinchu (TW)
CELL REGIONS AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362824 titled 'CELL REGIONS AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The abstract describes a method of manufacturing an ECO base cell.
- The method involves creating two active areas on opposite sides of a central axis.
- Three conductive structures are formed to overlap the active areas, with the first structure between the second and third structures.
- Material is removed from the central regions of the second and third conductive structures.
- A fourth conductive structure is formed over the central regions, overlapping a segment of the first structure and a segment of either the second or third structure.
Original Abstract Submitted
A method of manufacturing an ECO base cell includes forming first and second active areas on opposite sides of, and having corresponding long axes arranged parallel to, a first axis of symmetry; forming non-overlapping first, second and third conductive structures having long axes in a second direction perpendicular to the first direction and parallel to a second axis of symmetry, each of the first, second and third conductive structures to correspondingly overlap the first and second active areas, the first conductive structure being between the second and third conductive structures; removing material from central regions of the second and third conductive structures; and forming a fourth conductive structure being over the central regions of the second and third conductive structures and occupying an area which substantially overlaps a first segment of the first conductive structure and a first segment of one of the second and third conductive structures.
