US Patent Application 18362685. Memory Array Staircase Structure simplified abstract

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Memory Array Staircase Structure

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Meng-Han Lin of Hsinchu (TW)

Han-Jong Chia of Hsinchu (TW)

Sheng-Chen Wang of Hsinchu (TW)

Feng-Cheng Yang of Zhudong Township (TW)

Yu-Ming Lin of Hsinchu (TW)

Chung-Te Lin of Tainan City (TW)

Memory Array Staircase Structure - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362685 titled 'Memory Array Staircase Structure

Simplified Explanation

The patent application describes routing arrangements for 3D memory arrays and methods of forming them.

  • The memory array includes a first word line and a second word line.
  • The first word line extends from one edge of the memory array in a certain direction, while the second word line extends from the opposite edge in the same direction.
  • Both word lines are shorter than the length of another edge of the memory array.
  • The memory array also includes a memory film and an OS layer.
  • The memory film is in contact with the first word line.
  • The OS layer is in contact with a first source line and a first bit line.
  • The memory film is positioned between the OS layer and the first word line.


Original Abstract Submitted

Routing arrangements for 3D memory arrays and methods of forming the same are disclosed. In an embodiment, a memory array includes a first word line extending from a first edge of the memory array in a first direction, the first word line having a length less than a length of a second edge of the memory array perpendicular to the first edge of the memory array; a second word line extending from a third edge of the memory array opposite the first edge of the memory array, the second word line extending in the first direction, the second word line having a length less than the length of the second edge of the memory array; a memory film contacting the first word line; and an OS layer contacting a first source line and a first bit line, the memory film being disposed between the OS layer and the first word line.

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