US Patent Application 18362195. TRANSMISSION GATE STRUCTURE simplified abstract
Contents
TRANSMISSION GATE STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shao-Lun Chien of Hsinchu (TW)
Ting-Wei Chiang of Hsinchu (TW)
TRANSMISSION GATE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362195 titled 'TRANSMISSION GATE STRUCTURE
Simplified Explanation
The patent application describes a transmission gate structure that includes PMOS and NMOS transistors positioned in two separate active areas, with metal segments connecting them.
- The structure includes PMOS and NMOS transistors in separate active areas.
- Metal segments are used to connect the active areas.
- The gates of the PMOS and NMOS transistors are connected by conductive paths.
- The source/drain terminals of the transistors are also connected by a conductive path.
- The conductive path includes a segment that extends across at least three of the metal segments.
Original Abstract Submitted
A transmission gate structure includes first and second PMOS transistors positioned in a first active area, first and second NMOS transistors positioned in a second active area parallel to the first active area, and four metal segments parallel to the active areas. A first metal segment overlies the first active area, a fourth metal segment overlies the second active area, and second and third metal segments are a total of two metal segments positioned between the first and fourth metal segments. A first conductive path connects gates of the first PMOS and NMOS transistors, a second conductive path connects gates of the second PMOS and NMOS transistors, a third conductive path connects a source/drain (S/D) terminal of each of the first and second PMOS transistors and first and second NMOS transistors and includes a first conductive segment extending across at least three of the four metal segments.
