US Patent Application 18362195. TRANSMISSION GATE STRUCTURE simplified abstract

From WikiPatents
Jump to navigation Jump to search

TRANSMISSION GATE STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Shao-Lun Chien of Hsinchu (TW)

Pin-Dai Sue of Hsinchu (TW)

Li-Chun Tien of Hsinchu (TW)

Ting-Wei Chiang of Hsinchu (TW)

Ting Yu Chen of Hsinchu (TW)

TRANSMISSION GATE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362195 titled 'TRANSMISSION GATE STRUCTURE

Simplified Explanation

The patent application describes a transmission gate structure that includes PMOS and NMOS transistors positioned in two separate active areas, with metal segments connecting them.

  • The structure includes PMOS and NMOS transistors in separate active areas.
  • Metal segments are used to connect the active areas.
  • The gates of the PMOS and NMOS transistors are connected by conductive paths.
  • The source/drain terminals of the transistors are also connected by a conductive path.
  • The conductive path includes a segment that extends across at least three of the metal segments.


Original Abstract Submitted

A transmission gate structure includes first and second PMOS transistors positioned in a first active area, first and second NMOS transistors positioned in a second active area parallel to the first active area, and four metal segments parallel to the active areas. A first metal segment overlies the first active area, a fourth metal segment overlies the second active area, and second and third metal segments are a total of two metal segments positioned between the first and fourth metal segments. A first conductive path connects gates of the first PMOS and NMOS transistors, a second conductive path connects gates of the second PMOS and NMOS transistors, a third conductive path connects a source/drain (S/D) terminal of each of the first and second PMOS transistors and first and second NMOS transistors and includes a first conductive segment extending across at least three of the four metal segments.