US Patent Application 18362030. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chung-Te Lin of Tainan City (TW)
Wei-Yuan Lu of Taipei City (TW)
Feng-Cheng Yang of Hsinchu County (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362030 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for fabricating transistors on a wafer using epitaxial growth and bonding techniques.
- The method involves growing an epitaxial layer on a first region of a wafer while leaving a second region exposed.
- A first dielectric layer is then formed over the epitaxial layer and the second region.
- A first transistor is formed on a separate wafer.
- A second dielectric layer is formed over the first transistor.
- The first and second dielectric layers are bonded together.
- Finally, second and third transistors are formed on the epitaxial layer and the second region of the first wafer, respectively.
Original Abstract Submitted
A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.
