US Patent Application 18361917. SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF simplified abstract

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SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Jen-Chun Liao of Taipei City (TW)]]

[[Category:Sung-Yueh Wu of Chiayi County (TW)]]

[[Category:Chien-Ling Hwang of Hsinchu City (TW)]]

[[Category:Ching-Hua Hsieh of Hsinchu (TW)]]

SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361917 titled 'SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor package and a method for manufacturing it.

  • The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die.
  • The TSV penetrates through the carrier substrate and has two portions with different slanted sidewalls.
  • The first portion of the TSV has a milder slope compared to the second portion.
  • The first conductive pattern is located on the carrier substrate and connected to the first portion of the TSV.
  • The encapsulated die is placed on the carrier substrate and connected to the TSV through the first conductive pattern.


Original Abstract Submitted

A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.

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