US Patent Application 18361815. SEMICONDUCTOR DEVICE simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Yu-Jen Chen of Hsinchu (TW)

Ling-Sung Wang of Hsinchu (TW)

I-Shan Huang of Hsinchu (TW)

Chan-yu Hung of Hsinchu (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361815 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor structure with active regions and gate electrodes.

  • The semiconductor structure has active regions that extend in one direction and gate electrodes that extend in a perpendicular direction.
  • Each gate electrode has a first segment over one of the active regions and a gate extension that goes beyond the active regions.
  • The gate extension has a consistent width in the first direction.
  • There is also a conductive element in the gate electrode.
  • The width of the conductive element increases as the distance from the gate extension increases in the second direction.


Original Abstract Submitted

A semiconductor structure includes first and second active regions extending in a first direction. The semiconductor structure further includes gate electrodes extending in a second direction perpendicular to the first direction. Each of the gate electrodes includes a first segment over at least one of the first active region or the second active region; a gate extension extending beyond each of the first active region and the second active region, wherein the gate extension has a uniform width in the first direction, and a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.