US Patent Application 18361729. DEPOSITION SYSTEM AND METHOD simplified abstract
Contents
DEPOSITION SYSTEM AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
DEPOSITION SYSTEM AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361729 titled 'DEPOSITION SYSTEM AND METHOD
Simplified Explanation
- The abstract describes a deposition system that can measure film characteristics such as thickness, resistance, and composition. - The system includes a substrate process chamber, a substrate pedestal to support the substrate, and a target enclosing the chamber. - A shutter disk with an in-situ measuring device is provided in the system. - The measuring device allows for real-time measurement of film characteristics during the deposition process. - This innovation enables better control and monitoring of the deposition process, leading to improved film quality and efficiency.
Original Abstract Submitted
A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.
