US Patent Application 18361548. MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

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MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Meng-Han Lin of Hsinchu (TW)]]

[[Category:Chia-En Huang of Xinfeng Township (TW)]]

MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361548 titled 'MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a memory device with multiple memory cells arranged vertically.

  • The memory cells have a first channel segment that extends vertically with two sidewalls.
  • The first channel segment faces a first lateral direction with its sidewalls.
  • Each memory cell also has a ferroelectric segment that is in contact with one of the sidewalls of the first channel segment.
  • The width of the ferroelectric segment along a second lateral direction is different from the width of the first channel segment along the same second lateral direction.
  • The second lateral direction is perpendicular to the first lateral direction.


Original Abstract Submitted

A memory device includes a plurality of first memory cells disposed along a vertical direction. Each of the plurality of first memory cells includes a portion of a first channel segment that extends along the vertical direction and has a first sidewall and a second sidewall. The first and second sidewalls of the first channel segment facing toward and away from a first lateral direction, respectively. Each of the plurality of first memory cells includes a portion of a first ferroelectric segment that also extends along the vertical direction and is in contact with the first sidewall of the first channel segment. A width of the first ferroelectric segment along a second lateral direction is different from a width of the first channel segment along the second lateral direction. The second lateral direction is perpendicular to the first lateral direction.

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