US Patent Application 18361249. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Meng-Han Lin of Hsinchu (TW)]]

[[Category:Chia-En Huang of Xinfeng Township (TW)]]

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361249 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor die that includes two semiconductor devices.

  • The first semiconductor device consists of a sub-array of memory devices and an interface portion with a staircase profile in a vertical direction.
  • The second semiconductor device is located adjacent to the first device in the opposite direction and also includes a sub-array of memory devices and an interface portion with a staircase profile.
  • The first and second semiconductor devices are electrically isolated from each other.


Original Abstract Submitted

A semiconductor die comprises: a first semiconductor device and a second semiconductor device. The first semiconductor device comprises a first device portion comprising a first sub-array of memory devices, and a first interface portion located adjacent to the first device portion in a first direction. The first interface portion has a staircase profile in a vertical direction. The second semiconductor device comprises a second device portion adjacent to the first device portion in the first direction opposite the first interface portion. The second device portion comprises a second sub-array of memory devices, and a second interface portion located adjacent to the first device portion in the first direction opposite the first interface portion. The second interface portion also has a staircase profile in the vertical direction. The first semiconductor device is electrically isolated from the second semiconductor device.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18361249._SEMICONDUCTOR_MEMORY_DEVICES_AND_METHODS_OF_MANUFACTURING_THEREOF_simplified_abstract&oldid=9051"