US Patent Application 18361249. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

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SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Meng-Han Lin of Hsinchu (TW)]]

[[Category:Chia-En Huang of Xinfeng Township (TW)]]

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361249 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor die that includes two semiconductor devices.

  • The first semiconductor device consists of a sub-array of memory devices and an interface portion with a staircase profile in a vertical direction.
  • The second semiconductor device is located adjacent to the first device in the opposite direction and also includes a sub-array of memory devices and an interface portion with a staircase profile.
  • The first and second semiconductor devices are electrically isolated from each other.


Original Abstract Submitted

A semiconductor die comprises: a first semiconductor device and a second semiconductor device. The first semiconductor device comprises a first device portion comprising a first sub-array of memory devices, and a first interface portion located adjacent to the first device portion in a first direction. The first interface portion has a staircase profile in a vertical direction. The second semiconductor device comprises a second device portion adjacent to the first device portion in the first direction opposite the first interface portion. The second device portion comprises a second sub-array of memory devices, and a second interface portion located adjacent to the first device portion in the first direction opposite the first interface portion. The second interface portion also has a staircase profile in the vertical direction. The first semiconductor device is electrically isolated from the second semiconductor device.