US Patent Application 18360901. Contact Via Formation simplified abstract
Contents
Contact Via Formation
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chia-Hao Chang of Hsinchu City (TW)
Cheng-Chi Chuang of New Taipei City (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
Chih-Hao Wang of Hsinchu County (TW)
Contact Via Formation - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360901 titled 'Contact Via Formation
Simplified Explanation
The patent application is about semiconductor devices and methods of forming them.
- The semiconductor device includes an active region with a channel region and a source/drain region.
- The source/drain contact structure is located over the source/drain region.
- The source/drain contact structure has a base portion that extends in one direction and a via portion that tapers away from the base portion.
- The via portion is perpendicular to the base portion.
- The invention provides a new design for the source/drain contact structure in a semiconductor device.
Original Abstract Submitted
Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes an active region including a channel region and a source/drain region and extending along a first direction, and a source/drain contact structure over the source/drain region. The source/drain contact structure includes a base portion extending lengthwise along a second direction perpendicular to the first direction, and a via portion over the base portion. The via portion tapers away from the base portion.
