US Patent Application 18360478. Method of Manufacturing Semiconductor Devices with Multiple Silicide Regions simplified abstract
Contents
Method of Manufacturing Semiconductor Devices with Multiple Silicide Regions
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yan-Ming Tsai of Toufen Township (TW)
Hung-Hsu Chen of Tainan City (TW)
Chih-Wei Chang of Hsinchu (TW)
Sheng-Hsuan Lin of Zhubei City (TW)
Method of Manufacturing Semiconductor Devices with Multiple Silicide Regions - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360478 titled 'Method of Manufacturing Semiconductor Devices with Multiple Silicide Regions
Simplified Explanation
- This patent application describes a semiconductor device that has multiple silicide regions. - The device includes a source/drain region on which a first silicide precursor and a second silicide precursor are deposited. - A first silicide is formed with the first silicide precursor, and it has a first phase. - The second silicide precursor is insoluble within the first phase of the first silicide. - The first phase of the first silicide is modified to a second phase, and the second silicide precursor is soluble within this second phase. - A second silicide is then formed using the second silicide precursor and the second phase of the first silicide.
Original Abstract Submitted
A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.
