US Patent Application 18359735. DEPOSITION WINDOW ENLARGEMENT simplified abstract

DEPOSITION WINDOW ENLARGEMENT

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Meng-Han Chou of Hsinchu City (TW)

Kuan-Yu Yeh of Taoyuan City (TW)

Wei-Yip Loh of Hsinchu City (TW)

Hung-Hsu Chen of Tainan (TW)

Su-Hao Liu of Chiayi County (TW)

Liang-Yin Chen of Hsinchu City (TW)

Huicheng Chang of Tainan City (TW)

Yee-Chia Yeo of Hsinchu City (TW)

DEPOSITION WINDOW ENLARGEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359735 titled 'DEPOSITION WINDOW ENLARGEMENT

Simplified Explanation

The present disclosure describes a method for enlarging the process window for forming a source/drain contact in a semiconductor device.

• The method involves receiving a workpiece with a source/drain feature exposed in a source/drain opening between two gate structures.
• A dielectric layer is then deposited over the sidewalls of the source/drain opening and the top surface of the source/drain feature in a conformal manner.
• The dielectric layer is anisotropically etched to expose the source/drain feature.
• An implantation process is performed on the dielectric layer, which includes a non-zero tilt angle.
• After the implantation process, a pre-clean process is performed on the workpiece.

The innovation in this patent application lies in the method of enlarging the process window for forming a source/drain contact by utilizing a non-zero tilt angle during the implantation process. This allows for improved control and optimization of the source/drain contact formation, leading to enhanced device performance and reliability.

Original Abstract Submitted

The present disclosure provides a method to enlarge the process window for forming a source/drain contact. The method may include receiving a workpiece that includes a source/drain feature exposed in a source/drain opening defined between two gate structures, conformally depositing a dielectric layer over sidewalls of the source/drain opening and a top surface of the source/drain feature, anisotropically etching the dielectric layer to expose the source/drain feature, performing an implantation process to the dielectric layer, and after the performing of the implantation process, performing a pre-clean process to the workpiece. The implantation process includes a non-zero tilt angle.