US Patent Application 18359690. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Marcus Johannes Henricus Van Dal of Hsinchu (TW)]]

[[Category:Gerben Doornbos of Hsinchu (TW)]]

[[Category:Georgios Vellianitis of Hsinchu (TW)]]

[[Category:Mauricio Manfrini of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359690 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a channel layer, source/drain contacts, and first barrier liners.

  • The channel layer is made of an oxide semiconductor material.
  • The source/drain contacts are in direct contact with the channel layer.
  • The first barrier liners surround the source/drain contacts and are made of a hydrogen barrier material.
  • The purpose of the first barrier liners is to prevent hydrogen from diffusing through them and reaching the channel layer.


Original Abstract Submitted

A semiconductor device includes a channel layer, source/drain contacts, and first barrier liners. The channel layer includes an oxide semiconductor material. The source/drain contacts are disposed in electrical contact with the channel layer. The first barrier liners surround the source/drain contacts, respectively, and include a hydrogen barrier material so as to prevent hydrogen from diffusion through the first barrier liners to the channel layer.

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