US Patent Application 18359690. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Marcus Johannes Henricus Van Dal of Hsinchu (TW)]]

[[Category:Gerben Doornbos of Hsinchu (TW)]]

[[Category:Georgios Vellianitis of Hsinchu (TW)]]

[[Category:Mauricio Manfrini of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359690 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a channel layer, source/drain contacts, and first barrier liners.

  • The channel layer is made of an oxide semiconductor material.
  • The source/drain contacts are in direct contact with the channel layer.
  • The first barrier liners surround the source/drain contacts and are made of a hydrogen barrier material.
  • The purpose of the first barrier liners is to prevent hydrogen from diffusing through them and reaching the channel layer.


Original Abstract Submitted

A semiconductor device includes a channel layer, source/drain contacts, and first barrier liners. The channel layer includes an oxide semiconductor material. The source/drain contacts are disposed in electrical contact with the channel layer. The first barrier liners surround the source/drain contacts, respectively, and include a hydrogen barrier material so as to prevent hydrogen from diffusion through the first barrier liners to the channel layer.