US Patent Application 18359578. Stacked Semiconductor Device and Method simplified abstract
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Contents
Stacked Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Stacked Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359578 titled 'Stacked Semiconductor Device and Method
Simplified Explanation
The patent application describes a semiconductor device and a method of forming it.
- The device includes a first substrate, a capacitor, a diode structure, and a first interconnect structure.
- The capacitor and diode structure are located within the first substrate.
- The first interconnect structure is positioned over the capacitor and diode structure.
- A first conductive via of the first interconnect structure connects the capacitor to the diode structure.
Original Abstract Submitted
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.
