US Patent Application 18359552. INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
Contents
INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Guan-Xuan Chen of Taoyuan (TW)
Chia-Yang Hung of Kaohsiung (TW)
Sheng-Liang Pan of Hsinchu (TW)
INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359552 titled 'INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES
Simplified Explanation
This patent application describes a method of forming a semiconductor device. Here are the key points:
- The method starts by forming a first conductive feature in a dielectric layer over a substrate.
- A second dielectric layer is then formed over the first dielectric layer.
- The second dielectric layer is etched using a patterned mask layer to create an opening that exposes the first conductive feature.
- After the etching, an ashing process is performed to remove the patterned mask layer.
- The opening is then wet cleaned, which enlarges the bottom portion of the opening.
- Finally, the opening is filled with a first electrically conductive material.
Overall, this method provides a way to create a semiconductor device with precise openings and improved conductivity.
Original Abstract Submitted
A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.
