US Patent Application 18359414. SEMICONDUCTOR DEVICE WITH CONNECTING STRUCTURE HAVING A DOPED LAYER AND METHOD FOR FORMING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE WITH CONNECTING STRUCTURE HAVING A DOPED LAYER AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kuo-Ju Chen of Taichung City (TW)

Chun-Hsien Huang of Hsinchu (TW)

Su-Hao Liu of Jhongpu Township (TW)

Liang-Yin Chen of Hsinchu (TW)

Huicheng Chang of Tainan City (TW)

Yee-Chia Yeo of Hsinchu (TW)

SEMICONDUCTOR DEVICE WITH CONNECTING STRUCTURE HAVING A DOPED LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359414 titled 'SEMICONDUCTOR DEVICE WITH CONNECTING STRUCTURE HAVING A DOPED LAYER AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a connecting structure that is used in electronic devices.

  • The structure includes multiple layers, including a first dielectric layer, a doped dielectric layer, and a metal portion.
  • The first dielectric layer is placed over a substrate and a conductive feature.
  • The doped dielectric layer is placed over the first dielectric layer.
  • A first metal portion is located in the first dielectric layer and is in contact with the conductive feature.
  • A doped metal portion is placed over the first metal portion.
  • Both the first metal portion and the doped metal portion are made of the same noble metal material.
  • The doped dielectric layer and the doped metal portion contain the same dopants.


Original Abstract Submitted

A connecting structure includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants.

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