US Patent Application 18359383. GRAPHENE LAYER FOR REDUCED CONTACT RESISTANCE simplified abstract
Contents
GRAPHENE LAYER FOR REDUCED CONTACT RESISTANCE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shin-Yi Yang of New Taipei City (TW)
Ming-Han Lee of Taipei City (TW)
GRAPHENE LAYER FOR REDUCED CONTACT RESISTANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359383 titled 'GRAPHENE LAYER FOR REDUCED CONTACT RESISTANCE
Simplified Explanation
- The patent application describes a method for forming a trench within a dielectric layer. - The trench consists of an interconnect portion and a via portion that exposes an underlying conductive feature. - A seed layer is deposited within the trench, followed by a carbon layer. - A carbon dissolution process is performed, which causes a graphene layer to form between the seed layer and the underlying conductive feature. - The remaining part of the trench is filled with a conductive material.
Original Abstract Submitted
A method includes forming a trench within a dielectric layer, the trench comprising an interconnect portion and a via portion, the via portion exposing an underlying conductive feature. The method further includes depositing a seed layer within the trench, depositing a carbon layer on the seed layer, performing a carbon dissolution process to cause a graphene layer to form between the seed layer and the underlying conductive feature, and filling a remainder of the trench with a conductive material.
