US Patent Application 18359206. MANUFACTURING PROCESS WITH ATOMIC LEVEL INSPECTION simplified abstract

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MANUFACTURING PROCESS WITH ATOMIC LEVEL INSPECTION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:I-Che Lee of Taipei City (TW)]]

[[Category:Huai-Ying Huang of Jhonghe City (TW)]]

MANUFACTURING PROCESS WITH ATOMIC LEVEL INSPECTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359206 titled 'MANUFACTURING PROCESS WITH ATOMIC LEVEL INSPECTION

Simplified Explanation

- The patent application proposes using scanning probe microscopy during the fabrication process of integrated circuits to save costs and improve yields. - Scanning probe microscopy is used to gather conductance data, which provides information about device characteristics that are typically only available at the end of the manufacturing process. - The collected data is used to identify and address any issues or conditions on the substrates. - Some substrates may be discarded based on the data to avoid the expense of further processing. - The data can also be used to selectively carry out process maintenance operations. - Overall, the innovation aims to optimize the fabrication process by utilizing conductance data obtained through scanning probe microscopy.


Original Abstract Submitted

Costs may be avoided and yields improved by applying scanning probe microscopy to substrates in the midst of an integrated circuit fabrication process sequence. Scanning probe microscopy may be used to provide conductance data. Conductance data may relate to device characteristics that are normally not available until the conclusion of device manufacturing. The substrates may be selectively treated to ameliorate a condition revealed by the data. Some substrates may be selectively discarded based on the data to avoid the expense of further processing. A process maintenance operation may be selectively carried out based on the data.