US Patent Application 18359036. Conductive Feature Formation and Structure simplified abstract
Contents
Conductive Feature Formation and Structure
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yu Shih Wang of Tainan City (TW)
Shian Wei Mao of Taipei City (TW)
Ming-Hsing Tsai of Chu-Pei City (TW)
Conductive Feature Formation and Structure - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359036 titled 'Conductive Feature Formation and Structure
Simplified Explanation
The patent application is about conductive features and methods for forming them.
- The application describes a process for forming conductive features such as metal contacts, vias, and lines.
- A barrier layer is first formed along a sidewall.
- A portion of the barrier layer is then etched back.
- After etching back the portion of the barrier layer, the upper portion of the barrier layer along the sidewall is smoothed.
- Finally, a conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.
Original Abstract Submitted
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.
