Resistor Structure

Organization Name

Resistor Structure - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358557 titled 'Resistor Structure

Simplified Explanation

- The patent application describes a method for forming semiconductor structures. - The method involves creating a conductive feature and a first conductive plate on a substrate. - A dielectric layer is then deposited over the conductive feature and first conductive plate. - A conductive layer is also deposited over the conductive feature and first conductive plate. - The conductive layer is patterned to form a second conductive plate over the first conductive plate and a resistor. - The resistor includes a conductive line that extends along a sidewall of the conductive feature. - This method allows for the formation of a high-resistance resistor and a capacitor, regardless of the limitations of lithography resolution.

Original Abstract Submitted

Semiconductor structures and methods of forming the same are provided. A method according to an embodiment includes forming a conductive feature and a first conductive plate over a substrate, conformally depositing a dielectric layer over the conductive feature and the first conductive plate, conformally depositing a conductive layer over the conductive feature and the first conductive plate, and patterning the conductive layer to form a second conductive plate over the first conductive plate and a resistor, the resistor includes a conductive line extending along a sidewall of the conductive feature. By employing the method, a high-resistance resistor may be formed along with a capacitor regardless of the resolution limit of, for example, lithography.

US Patent Application 18358557. Resistor Structure simplified abstract

Contents

Resistor Structure

Organization Name