US Patent Application 18358491. SEMICONDUCTOR PACKAGE WITH IMPROVED INTERPOSER STRUCTURE simplified abstract
Contents
SEMICONDUCTOR PACKAGE WITH IMPROVED INTERPOSER STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yi-Wen Wu of New Taipei City (TW)
Techi Wong of Zhubei City (TW)
Po-Hao Tsai of Zhongli City (TW)
Po-Yao Chuang of Hsin-Chu (TW)
Shih-Ting Hung of New Taipei City (TW)
SEMICONDUCTOR PACKAGE WITH IMPROVED INTERPOSER STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18358491 titled 'SEMICONDUCTOR PACKAGE WITH IMPROVED INTERPOSER STRUCTURE
Simplified Explanation
The abstract describes a semiconductor package that includes a redistribution structure, a semiconductor die, and an interposer structure. The interposer structure consists of an insulating base with conductive features formed on it. These conductive features are divided into four portions: first portions that overlap the semiconductor die, second portions located outside the projection area of the semiconductor die, third portions that overlap the semiconductor die on the second surface of the insulating base, and fourth portions located outside the projection area of the semiconductor die on the second surface of the insulating base. The interposer structure also includes capping layers and dielectric features.
- A semiconductor package with a redistribution structure, semiconductor die, and interposer structure is described.
- The interposer structure consists of an insulating base with conductive features.
- The conductive features are divided into four portions: first portions overlapping the semiconductor die, second portions located outside the projection area of the semiconductor die, third portions overlapping the semiconductor die on the second surface of the insulating base, and fourth portions located outside the projection area of the semiconductor die on the second surface of the insulating base.
- The interposer structure also includes capping layers and dielectric features.
Original Abstract Submitted
A semiconductor package is provided. The semiconductor package includes a redistribution structure, a semiconductor die, and an interposer structure. The interposer structure includes an insulating base having a first surface facing the semiconductor die and a second surface opposite to the first surface and conductive features formed over the insulating base. The conductive features include first portions on the first surface of the insulating base and vertically overlapping the semiconductor die, second portions on the first surface of the insulating base and located outside a projection area of the semiconductor die in a top view, third portions on the second surface of the insulating base and vertically overlapping the semiconductor die, and fourth portions on the second surface of the insulating base and located outside the projection area of the semiconductor die in the top view. The interposer structure includes capping layers and dielectric features.
