US Patent Application 18358321. Buried Metal for FinFET Device and Method simplified abstract
Contents
Buried Metal for FinFET Device and Method
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Lei-Chun Chou of Taipei City (TW)
Chih-Liang Chen of Hsinchu (TW)
Jiann-Tyng Tzeng of Hsinchu (TW)
Ru-Gun Liu of Zhubei City (TW)
Charles Chew-Yuen Young of Cupertino CA (US)
Buried Metal for FinFET Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18358321 titled 'Buried Metal for FinFET Device and Method
Simplified Explanation
The patent application describes a semiconductor device that includes a buried metal line in a semiconductor substrate.
- The buried metal line is surrounded by two dielectric materials on its sidewalls.
- Multiple fins are placed near each sidewall of the buried metal line.
- Metal gate structures are positioned over the multiple fins and the buried metal line.
- The metal gate structures extend through the dielectric materials to make contact with the buried metal line.
Original Abstract Submitted
A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.
