US Patent Application 18358152. METHODS OF FORMING SILICIDE CONTACT IN FIELD-EFFECT TRANSISTORS simplified abstract

METHODS OF FORMING SILICIDE CONTACT IN FIELD-EFFECT TRANSISTORS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chun-Hsiung Lin of Hsinchu County (TW)

Shih-Cheng Chen of New Taipei City (TW)

Chih-Hao Wang of Hsinchu City (TW)

Jung-Hung Chang of Changhua County (TW)

Jui-Chien Huang of Hsinchu City (TW)

METHODS OF FORMING SILICIDE CONTACT IN FIELD-EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358152 titled 'METHODS OF FORMING SILICIDE CONTACT IN FIELD-EFFECT TRANSISTORS

Simplified Explanation

The patent application describes a semiconductor structure that includes a semiconductor fin, a source/drain feature, a silicide layer, and an etch-stop layer.

• The semiconductor fin extends from a substrate.
• The source/drain feature is positioned over the semiconductor fin.
• The silicide layer is placed over the source/drain feature and extends along its sidewall.
• The etch-stop layer is located along the sidewall of the silicide layer.

The innovation in this patent application lies in the arrangement and configuration of the semiconductor structure, specifically the use of the silicide layer and etch-stop layer.

Original Abstract Submitted

A semiconductor structure includes a semiconductor fin extending from a substrate, a source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the S/D feature, where the silicide layer extends along a sidewall of the S/D feature, and an etch-stop layer (ESL) disposed along a sidewall of the silicide layer.