US Patent Application 18357449. Nanostructure Field-Effect Transistor Device and Method of Forming simplified abstract
Contents
Nanostructure Field-Effect Transistor Device and Method of Forming
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsueh-Ju Chen of Taipei City (TW)
Nanostructure Field-Effect Transistor Device and Method of Forming - A simplified explanation of the abstract
This abstract first appeared for US patent application 18357449 titled 'Nanostructure Field-Effect Transistor Device and Method of Forming
Simplified Explanation
This patent application describes a method of forming a semiconductor device. Here are the key points:
- The method involves forming nanostructures over protruding fins in different regions of the semiconductor device.
- The nanostructures are made of a semiconductor material and extend parallel to the substrate's surface.
- A dielectric material is then formed around the nanostructures.
- A hard mask layer is formed around the nanostructures in each region.
- The hard mask layer is removed from one of the regions.
- After the removal of the hard mask layer, the thickness of the dielectric material around the nanostructures in the remaining region is increased through an oxidization process.
Original Abstract Submitted
A method of forming a semiconductor device includes: forming, in a first device region of the semiconductor device, first nanostructures over a first fin that protrudes above a substrate; forming, in a second device region of the semiconductor device, second nanostructures over a second fin that protrudes above the substrate, where the first and the second nanostructures include a semiconductor material and extend parallel to an upper surface of the substrate; forming a dielectric material around the first and the second nanostructures; forming a first hard mask layer in the first device region around the first nanostructures and in the second device region around the second nanostructures; removing the first hard mask layer from the second device region after forming the first hard mask layer; and after removing the first hard mask layer, increasing a first thickness of the dielectric material around the second nanostructures by performing an oxidization process.
