US Patent Application 18357038. PATTERNING MATERIAL INCLUDING SILICON-CONTAINING LAYER AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION simplified abstract
PATTERNING MATERIAL INCLUDING SILICON-CONTAINING LAYER AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Szu-Ping Tung of Taipei City (TW)
Chun-Kai Chen of Kaohsiung City (TW)
Yi-Nien Su of Hsinchu City (TW)
PATTERNING MATERIAL INCLUDING SILICON-CONTAINING LAYER AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18357038 titled 'PATTERNING MATERIAL INCLUDING SILICON-CONTAINING LAYER AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION
Simplified Explanation
- The patent application is about a method for lithography patterning. - The method involves several steps including providing a substrate and forming a target layer over it. - A patterning layer is then formed by depositing a first layer with an organic composition. - Next, a second layer is deposited which contains over 50 atomic percent of silicon. - Finally, a photosensitive layer is deposited on top of the second layer. - The second layer can be deposited using ALD, CVD, or PVD processes.
Original Abstract Submitted
In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.
