US Patent Application 18351226. INTERLAYER DIELECTRIC LAYER simplified abstract
Contents
INTERLAYER DIELECTRIC LAYER
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Joung-Wei Liou of Hsinchu (TW)
INTERLAYER DIELECTRIC LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18351226 titled 'INTERLAYER DIELECTRIC LAYER
Simplified Explanation
- The patent application describes a method for creating a specific type of layer called a low-k ILD layer. - This layer is made of silicon and has a high concentration of carbon, between 15% and 20%. - The method involves depositing a dielectric layer made of a material with a low dielectric constant (below 3.9) and the desired carbon concentration. - The dielectric layer is then subjected to a thermal process to remove any gases trapped within the material. - Afterward, the layer is etched to create openings or voids. - These openings are then filled with a conductive material to create conductive structures.
Original Abstract Submitted
The present disclosure describes a method for forming a silicon-based, carbon-rich, low-k ILD layer with a carbon concentration between about 15 atomic % and about 20 atomic %. For example, the method includes depositing a dielectric layer, over a substrate, with a dielectric material having a dielectric constant below 3.9 and a carbon atomic concentration between about 15% and about 20%; exposing the dielectric layer to a thermal process configured to outgas the dielectric material; etching the dielectric layer to form openings; and filling the openings with a conductive material to form conductive structures.
