US Patent Application 18350187. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SUNG SOO Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18350187 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes active patterns and trenches on a substrate. The device has a first trench between two adjacent active patterns and a second trench between two other adjacent active patterns. The second trench is wider than the first trench. The device also includes device isolation layers in each trench, with the second trench having protrusions on its top surface.
- Semiconductor device with active patterns and trenches on a substrate - Two sets of adjacent active patterns with a trench between them - First trench is narrower than the second trench - Device isolation layers in each trench - Second trench has protrusions on its top surface
Original Abstract Submitted
A semiconductor device includes first and second active patterns on a substrate, the first and second active patterns adjacent to each other in a first direction with a first trench between the first and second active patterns, third and fourth active patterns on the substrate, the third and fourth active patterns adjacent to each other in the first direction with a second trench between the third and fourth active patterns. The semiconductor device includes a first device isolation layer in the first trench, and a second device isolation layer in the second trench. A width of the second trench in the first direction is greater than a width of the first trench in the first direction. The second device isolation layer includes a first protrusion and a second protrusion which protrude from a top surface of the second device isolation layer.
